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 2N4416 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4416
The 2N4416 is a N-Channel high frequency JFET amplifier
The 2N4416 N-channel JFET is designed to provide high-performance amplification at high frequencies. The hermetically sealed TO-18 package is well suited for military applications and harsh environment applications. FEATURES DIRECTREPLACEMENTFORSILICONIX2N4416 EXCEPTIONALGAIN(400MHz) VERYLOWNOISEFIGURE(400MHz) VERYLOWDISTORTION HIGHAC/DCSWITCHOFFISOLATION ABSOLUTEMAXIMUMRATINGS @25C(unlessotherwisenoted) MaximumTemperatures StorageTemperature OperatingJunctionTemperature MaximumPowerDissipation ContinuousPowerDissipation MAXIMUMCURRENT GateCurrent(Note1) MAXIMUMVOLTAGES GatetoDrainorGatetoSource 10dB(min) 4dB(max)
2N4416 Benefits:
Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification
65Cto+200C 55Cto+135C 300mW 10mA 30V
2N4416 Applications:
High-Frequency Amplifier / Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
2N4416ELECTRICALCHARACTERISTICS@25C(unlessotherwisenoted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS BVGSS GatetoSourceBreakdownVoltage 30 V VGS(off) GatetoSourceCutoffVoltage 6 V IDSS GatetoSourceSaturationCurrent 5 15 mA IGSS GateLeakageCurrent 0.1 nA gfs ForwardTransconductance 4500 7500 S gos OutputConductance 50 S Ciss InputCapacitance2 0.8 pF Crss ReverseTransferCapacitance2 4 pF Coss OutputCapacitance2 2 pF en EquivalentInputNoiseVoltage 6 nV/Hz 2N4416HIGHFREQUENCYELECTRICALCHARACTERISTICS@25C(unlessotherwisenoted) SYMBOL CHARACTERISTIC 100Mhz 400Mhz UNITS MIN MAX MIN MAX gIss bIss goss boss Gfs Gps NF NOTES InputConductance InputSusceptance2 OutputConductance OutputSusceptance ForwardTransconductance PowerGain NoiseFigure
2 2 2
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CONDITIONS 18 100 2500 75 1000 2 4000 10 1000 10000 100 4000 4 dB S 1.Absolutemaximumratingsarelimitingvaluesabovewhich2N4416serviceabilitymaybeimpaired. 2.Notproductiontested,guaranteedbydesign Available Packages: 2N4416 in TO-18 2N4416 in bare die. TO-18 (Bottom View)
CONDITIONS IG=1A,VDS=0V VDS=15V,ID=1nA VDS=15V,VGS=0V VGS=20V,VDS=0V VDS=15V,VGS=0V,f=1kHz VDS=15V,VGS=0V,f=1MHz VDS=10V,VGS=0V,f=1kHz
VDS=15V,VGS=0V
VDS=15V,ID=5mA VDS=15V,ID=5mA,RG=1k
Micross Components Europe
Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution
Please contact Micross for full package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx


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